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Author:

Wang, He (Wang, He.) | Shen, Lvkang (Shen, Lvkang.) | Duan, Tingzhi (Duan, Tingzhi.) | Ma, Chunrui (Ma, Chunrui.) | Cao, Cuimei (Cao, Cuimei.) | Jiang, Changjun (Jiang, Changjun.) | Lu, Xiaoli (Lu, Xiaoli.) | Sun, Huiyuan (Sun, Huiyuan.) | Liu, Ming (Liu, Ming.)

Indexed by:

SCIE EI Scopus

Abstract:

High-quality flexible magnetic oxide thin films have promoted a wide range of potential applications in spintronic devices due to their unique physical properties. To obtain the optimized microwave magnetism for future all-oxide-based spintronic applications, high-quality oxide materials with excellent epitaxial quality as well as specific bending properties related to ferromagnetic resonance are high in demand. Here, (001)-oriented La0.67Sr0.33MnO3 epitaxial thin films with different thicknesses have been grown and subsequently transferred onto flexible poly(dimethylsiloxane) substrates. The microwave magnetisms of these film samples have been investigated under various bending states. Under bending, the ferromagnetic resonance lineshape of the film gradually transits from a single mode to a superposition of multimodes, possibly because of the uneven distribution of magnetization in the bending film at X-band. This phenomenon is more apparent when the direction of the applied magnetic field goes close to the out-of-plane of the film. Hence, an integration of invariable and continuous tuning of ferromagnetic resonance field under various mechanical bending can be achieved in one same sample by just tuning the direction of the applied magnetic field, which reveals that the flexible La0.67Sr0.33MnO3 thin films have huge potential in the applications in future flexible multifunctional devices.

Keyword:

epitaxial oxide thin film ferromagnetic resonance flexible spintronics magnetism mechanical bending

Author Community:

  • [ 1 ] [Wang, He; Shen, Lvkang; Duan, Tingzhi; Liu, Ming] Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Shaanxi, Peoples R China
  • [ 2 ] [Ma, Chunrui] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China
  • [ 3 ] [Cao, Cuimei; Jiang, Changjun] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China
  • [ 4 ] [Lu, Xiaoli] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China
  • [ 5 ] [Sun, Huiyuan] Hebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050024, Hebei, Peoples R China
  • [ 6 ] [Sun, Huiyuan] Hebei Normal Univ, Key Lab Adv Films Hebei Prov, Shijiazhuang 050024, Hebei, Peoples R China
  • [ 7 ] [Wang, He]Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Shaanxi, Peoples R China
  • [ 8 ] [Shen, Lvkang]Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Shaanxi, Peoples R China
  • [ 9 ] [Duan, Tingzhi]Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Shaanxi, Peoples R China
  • [ 10 ] [Liu, Ming]Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Shaanxi, Peoples R China
  • [ 11 ] [Ma, Chunrui]Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China
  • [ 12 ] [Cao, Cuimei]Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China
  • [ 13 ] [Jiang, Changjun]Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China
  • [ 14 ] [Lu, Xiaoli]Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China
  • [ 15 ] [Sun, Huiyuan]Hebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050024, Hebei, Peoples R China
  • [ 16 ] [Sun, Huiyuan]Hebei Normal Univ, Key Lab Adv Films Hebei Prov, Shijiazhuang 050024, Hebei, Peoples R China

Reprint Author's Address:

  • [Liu, Ming]School of Microelectronics, Xi'An Jiaotong University, Xi'an; 710049, China;;

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Source :

ACS APPLIED MATERIALS & INTERFACES

ISSN: 1944-8244

Year: 2019

Issue: 25

Volume: 11

Page: 22677-22683

8 . 7 5 8

JCR@2019

9 . 2 2 9

JCR@2020

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:131

JCR Journal Grade:2

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 16

SCOPUS Cited Count: 29

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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