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Author:

Zhao, Yifan (Zhao, Yifan.) | Zhao, Shishun (Zhao, Shishun.) | Wang, Lei (Wang, Lei.) | Zhou, Ziyao (Zhou, Ziyao.) | Liu, Junxue (Liu, Junxue.) | Min, Tai (Min, Tai.) | Peng, Bin (Peng, Bin.) | Hu, Zhongqiang (Hu, Zhongqiang.) | Jin, Shengye (Jin, Shengye.) | Liu, Ming (Liu, Ming.)

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Abstract:

The inexorable trend of next generation spintronics is to develop smaller, lighter, faster, and more energy efficient devices. Ultimately, spintronics driven by free energy, for example, solar power, is imperative. Here, a prototype photovoltaic spintronic device with an optical-magneto-electric tricoupled photovoltaic/magnetic thin film heterojunction, where magnetism can be manipulated directly by sunlight via interfacial effect, is proposed. The magnetic anisotropy is reduced evidenced by the out-of-plane ferromagnetic resonance (FMR) field change of 640.26 Oe under 150 mW cm−2 illumination via in situ electron spin resonance (ESR) method. The transient absorption analysis and the first-principles calculation reveal that the photovoltaic electrons doping in the cobalt film alter the band filling of this ferromagnetic film. The findings provide a new path of electron doping control magnetism and demonstrate an optical-magnetic dual controllable logical switch with limited energy supply, which may further transform the landscape of spintronics research. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keyword:

Calculations Critical currents Electron spin resonance spectroscopy Energy efficiency Ferromagnetic materials Ferromagnetic resonance Ferromagnetism Free energy Heterojunctions Magnetic anisotropy Magnetic moments Organic solar cells Photovoltaic effects Semiconductor doping Solar cells Solar energy Spintronics Thin films

Author Community:

  • [ 1 ] [Zhao, Yifan]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering and State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an; 710049, China; International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 2 ] [Zhao, Shishun]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering and State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 3 ] [Wang, Lei]Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an; Shaanxi; 710049, China
  • [ 4 ] [Zhou, Ziyao]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering and State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 5 ] [Liu, Junxue]State Key Laboratory of Molecular Reaction Dynamics and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Rd., Dalian; 116023, China
  • [ 6 ] [Min, Tai]Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an; Shaanxi; 710049, China
  • [ 7 ] [Peng, Bin]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering and State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 8 ] [Hu, Zhongqiang]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering and State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 9 ] [Jin, Shengye]State Key Laboratory of Molecular Reaction Dynamics and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Rd., Dalian; 116023, China
  • [ 10 ] [Liu, Ming]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering and State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an; 710049, China; International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an; 710049, China

Reprint Author's Address:

  • [Zhou, Ziyao]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering and State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an; 710049, China;;

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Source :

Advanced Science

Year: 2019

Issue: 24

Volume: 6

1 5 . 8 4

JCR@2019

1 6 . 8 0 6

JCR@2020

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 6

SCOPUS Cited Count: 20

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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