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Author:

Oliveira, R.G.M (Oliveira, R.G.M.) | Souza, D.C (Souza, D.C.) | de Morais, J.E.V (de Morais, J.E.V.) | Batista, G.S (Batista, G.S.) | Silva, M.A.S (Silva, M.A.S.) | Gouveia, D.X (Gouveia, D.X.) | Trukhanov, S (Trukhanov, S.) | Trukhanov, A (Trukhanov, A.) | Panina, L (Panina, L.) | Singh, C (Singh, C.) | Zhou, D (Zhou, D.) | Sombra, A.S.B (Sombra, A.S.B.)

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Abstract:

In this work, a complex impedance spectroscopy study of bismuth vanadate (BiVO4) ceramics with different additions of ZnO (25, 50, and 75 wt %) was performed. BiVO4 (BVO) was synthesized by the reaction method in solid-state and calcined at 500 °C and BVO–ZnO composites were moulded in sintered ceramic pellets at 700 °C. X-ray diffraction (XRD) was used to analyse the crystal structure of BVO and the BVO–ZnO composites; none spurious phase was observed during the synthesis. Analysis by complex impedance spectroscopy (CIS) showed that increasing the concentration of ZnO reveals increased activation energy due to thermo-activated charge transfer for the sample with 25 wt % ZnO. At room temperature, the increase in the ZnO concentration in the BVO matrix maintained a high value for the dielectric constant (Ε), in the order of 104 at a frequency of 1 Hz. Average normalized change (ANC) was used to identify the temperature at which the available density of trapped charge states vanishes in each sample. The temperature coefficient of capacitance was positive for BVO and negative for composites. The adjustment through the equivalent circuit presented excellent electrical response for the composites, and identified an association with three resistors, each in parallel a constant phase element, showing the influence of grain and grain boundary on the process of thermo-active conduction. © 2020, Springer Science+Business Media, LLC, part of Springer Nature.

Keyword:

Activation analysis Activation energy Bismuth compounds Charge transfer Crystal structure Dielectric properties Equivalent circuits Grain boundaries II-VI semiconductors Oxide minerals Spectroscopy Temperature Thermodynamic stability Zinc oxide

Author Community:

  • [ 1 ] [Oliveira, R.G.M.]Telecommunication and Materials Science and Engineering Laboratory (LOCEM), Physics Department, Federal University of Ceará (UFC), Pici Campus, P.O. Box 6030, Fortaleza; Ceará; 60455-760, Brazil
  • [ 2 ] [Souza, D.C.]Federal Institute of Ceará, Fortaleza/IFCE Campus, Fortaleza; Ceará; 63400-000, Brazil
  • [ 3 ] [de Morais, J.E.V.]Telecommunication Engineering Department, Federal University of Ceará (UFC), P.O. Box 6007, Fortaleza; Ceará; 60755-640, Brazil
  • [ 4 ] [de Morais, J.E.V.]Telecommunication and Materials Science and Engineering Laboratory (LOCEM), Physics Department, Federal University of Ceará (UFC), Pici Campus, P.O. Box 6030, Fortaleza; Ceará; 60455-760, Brazil
  • [ 5 ] [Batista, G.S.]Telecommunication and Materials Science and Engineering Laboratory (LOCEM), Physics Department, Federal University of Ceará (UFC), Pici Campus, P.O. Box 6030, Fortaleza; Ceará; 60455-760, Brazil
  • [ 6 ] [Silva, M.A.S.]Telecommunication and Materials Science and Engineering Laboratory (LOCEM), Physics Department, Federal University of Ceará (UFC), Pici Campus, P.O. Box 6030, Fortaleza; Ceará; 60455-760, Brazil
  • [ 7 ] [Gouveia, D.X.]Federal Institute of Ceará, Fortaleza/IFCE Campus, Fortaleza; Ceará; 63400-000, Brazil
  • [ 8 ] [Trukhanov, S.]National University of Science and Technology (MISiS), Leninskii Av., 4, Moscow; 4119049, Russia
  • [ 9 ] [Trukhanov, S.]South Ural State University, Lenin Av., 76, Chelyabinsk; 454080, Russia
  • [ 10 ] [Trukhanov, S.]Scientific and Practical Materials Research Center of the NAS of Belarus, P. Brovki Str., 19, Minsk; 220072, Belarus
  • [ 11 ] [Trukhanov, A.]National University of Science and Technology (MISiS), Leninskii Av., 4, Moscow; 4119049, Russia
  • [ 12 ] [Trukhanov, A.]South Ural State University, Lenin Av., 76, Chelyabinsk; 454080, Russia
  • [ 13 ] [Trukhanov, A.]Scientific and Practical Materials Research Center of the NAS of Belarus, P. Brovki Str., 19, Minsk; 220072, Belarus
  • [ 14 ] [Panina, L.]National University of Science and Technology (MISiS), Leninskii Av., 4, Moscow; 4119049, Russia
  • [ 15 ] [Panina, L.]Institute of Physics, Mathematics & IT, Immanuel Kant Baltic Federal University, A. Nevskiy Str., 14, Kaliningrad; 236041, Russia
  • [ 16 ] [Singh, C.]School of Electronics and Electrical Engineering, Lovely Professional University, Phagwara, India
  • [ 17 ] [Zhou, D.]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an; 710049, China
  • [ 18 ] [Sombra, A.S.B.]Telecommunication Engineering Department, Federal University of Ceará (UFC), P.O. Box 6007, Fortaleza; Ceará; 60755-640, Brazil
  • [ 19 ] [Sombra, A.S.B.]Telecommunication and Materials Science and Engineering Laboratory (LOCEM), Physics Department, Federal University of Ceará (UFC), Pici Campus, P.O. Box 6030, Fortaleza; Ceará; 60455-760, Brazil

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Source :

Journal of Materials Science: Materials in Electronics

ISSN: 0957-4522

Year: 2020

Issue: 16

Volume: 31

Page: 13078-13087

2 . 4 7 8

JCR@2020

2 . 4 7 8

JCR@2020

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:84

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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