The　flexible　La0.7Sr0.3MnO3　(LSMO)　film　shows　good　mechanical　stretchability　and　property　stability　under　bending　states,　which　makes　it　a　candidate　material　for　flexible　electronics　and　spintronics　devices.　Here　the　microwave　magnetism　of　flexible　LSMO　thin　film　has　been　manipulated　effectively　by　the　ionic　gel　(IG)　gating　process.　A　reversible　and　non-volatile　magnetoelectric　(ME)　coefficient　of　50　Oe/V　was　observed　using　electron　paramagnetic　resonance　(ESR)　technology　at　the　flat　multilayer　structure.　This　ME　coupling　is　caused　by　the　electrons　hopping　between　Mn3+　and　Mn4+　ions　under　the　interfacial　electric　double　layer.　When　the　membranes　were　bent　to　a　radius　of　curvature　of　15　mm,　a　larger　ME　coefficient　of　67　Oe/V　was　also　observed,　which　indicating　that　this　flexible　structure　can　work　effectively　under　mechanical　deformation.　This　work　demonstrates　the　voltage　control　of　magnetism　for　flexible　correlated　materials　and　paves　a　way　towards　wearable　low-power　devices　based　on　flexible　manganite　films.