Solid-state　quantum　emitters　play　a　critical　role　in　the　application　of　quantum　information　technology.　Quantum　emitters　with　high　brightness　at　room　temperature　can　be　realized　in　hBN,　and　it　has　become　a　current　research　hotspot.　However,　much　of　the　research　up　to　now　only　produced　quantum　emitters　at　the　edges　and　wrinkles　of　hBN,　which　tremendously　limited　the　usage　of　the　quantum　emitters.　In　this　work,　heavy　ions　irradiation　methods　were　employed　to　produce　high-quality　quantum　emitters　in　the　middle　region　of　the　hBN　sample.　The　quantum　emitter　production　engineering　via　heavy　ions　irradiation　was　systematically　investigated.　The　dependence　of　irradiated　ion　type,　energy,　and　fluence,　as　well　as　the　thickness　of　the　hBN　flakes,　on　the　production　efficiency　of　the　hBN　quantum　emitters　were　analyzed　in　detail.　The　characteristics　of　luminescence　of　quantum　emitters,　such　as　second-order　correlation　function　g(2)(τ),　stability,　polarization,　and　saturation,　were　all　compared　with　different　irradiation　conditions.　In　addition,　based　on　the　wavelength　statistical　results　of　quantum　emitters　in　hBN,　the　transition　energies　of　various　intrinsic　point　defects　in　hBN　were　studied　through　first-principles　calculations　to　reveal　the　originations　of　luminescence.　The　calculation　results　indicated　that　the　VN,　VB,　and　Bi　point　defects　were　possible　candidates　of　the　quantum　emitter　centers.　Overall,　in　this　study,　according　to　experimental　characterizations,　heavy　ion　irradiation　should　be　an　efficient　method　to　produce　stable,　ultrabright,　highly　linearly　polarized　quantum　emitters　in　hBN　flakes.　©　2021　American　Chemical　Society.