Asymmetric　resist　profile　induced　by　spin　coating　and　polymerization　of　resist　with　anomalous　profile　in　exposure　process　are　main　problems　in　imprint　lithography　alignment.　A　novel　technique　based　on　the　principle　of　imprint　lithography　process　is　proposed　to　solve　these　problems,　where　the　thickness　and　morphology　of　resist　film　are　optimized　with　restrained　force.　The　redistributed　resist　has　a　symmetric　profile　and　the　effect　of　reflection　from　the　top　resist　surface　is　greatly　weakened　by　controlling　the　thickness　of　film.　A　basic　forcing　process　is　developed　to　obtain　symmetric　resist　structure　and　maximum　signal　contrast　using　the　film　with　the　thickness　of　1.1　μm.　The　results　show　that　symmetric　resist　profile　can　be　achieved　as　the　pressure　is　larger　than　0.48　MPa　and　maximum　signal　contrast　occurs　as　the　pressure　is　1.12　MPa.　The　alignment　error　caused　by　asymmetric　resist　profile　or　polymerized　resist　film　on　the　marks　can　be　reduced　obviously　to　meet　the　requirements　of　imprint　lithography　within　100　nm.